View STFI26NM60N_7891301.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

this is information on a product in full production. june 2012 doc id 022495 rev 2 1/12 12 STFI26NM60N n-channel 600 v, 0.135 , 20 a mdmesh? ii power mosfet in i2pakfp package datasheet ? production data features fully insulated and low profile package with increased creepage path from pin to heatsink plate 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description this device is an n-channel power mosfet developed using the second generation of mdmesh? technology. this revolutionary power mosfet applies a new vertical structure to the company?s strip layout to yield a device with one of the world?s lowest on-resistance and gate charge, making it suitable for the most demanding high-efficiency converters. figure 1. internal schematic diagram type v dss r ds(on) max i d STFI26NM60N 600 v < 0.165 20 a i2pakfp 1 2 3 (to-281) 3# $ ' 3 table 1. device summary order codes marking package packaging STFI26NM60N 26nm60n i2pakfp (to-281) tu b e www.st.com
contents STFI26NM60N 2/12 doc id 022495 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STFI26NM60N electrical ratings doc id 022495 rev 2 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 20 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 12.6 (1) a i dm (2) 2. pulse width limited by safe operating area . drain current (pulsed) 80 (1) a p tot total dissipation at t c = 25 c 35 w derating factor 0.28 w/c dv/dt (3) 3. i sd 20 a, di/dt 400 a/s, v dspeak v (br)dss , v dd = 80% v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 3.6 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w table 4. avalanche characteristics symbol parameter value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 6a e as single pulse avalanche energy (starting t j =25 c, i d =i as , v dd =50 v) 610 mj
electrical characteristics STFI26NM60N 4/12 doc id 022495 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c = 125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 0.1 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 10 a 0.135 0.165 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1800 115 1.1 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 310 - pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 20 a, v gs = 10 v, (see figure 15) - 60 8.5 30 - nc nc nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level = 20 mv open drain -2.8 - table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f tu r n - o n d e l ay t i m e rise time turn-off delay time fall time v dd = 300 v, i d = 10 a r g =4.7 v gs = 10 v (see figure 14) - 13 25 85 50 - ns ns ns ns
STFI26NM60N electrical characteristics doc id 022495 rev 2 5/12 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 20 80 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 20 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 20 a, di/dt = 100 a/s v dd = 60 v (see figure 16) - 370 5.8 31.6 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 20 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 16) - 450 7.5 32.5 ns c a
electrical characteristics STFI26NM60N 6/12 doc id 022495 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. transconductance figure 7. static drain-source on-resistance i d 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e 10 am0 33 15v1 g f s 6.5 4.5 2.5 0.5 0 10 i d (a) ( s ) 5 20 8 .5 15 t j =150c t j =25c t j =-50c am0 33 1 8 v1 r d s (on) 0.1 3 0.12 0.11 0.1 0 10 i d (a) ( ) 5 15 0.14 0.15 0.16 v g s =10v 20 am0 33 17v1
STFI26NM60N electrical characteristics doc id 022495 rev 2 7/12 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized v ds vs temperature v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =4 8 0v i d =20a 50 12 60 am0 33 20v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am0 33 19v1 v g s (th) 1.0 0.9 0. 8 0.7 -50 0 t j (c) (norm) -25 1.1 75 25 50 100 i d = 250 a am0 33 21v1 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 2.1 v g s = 10 v am0 33 22v1 v s d 0 i s d (a) (v) 5 10 15 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am0 33 24v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.02 1.04 1.06 i d =1ma 1.0 8 1.10 am0902 8 v1
test circuits STFI26NM60N 8/12 doc id 022495 rev 2 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STFI26NM60N package mechanical data doc id 022495 rev 2 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STFI26NM60N 10/12 doc id 022495 rev 2 figure 20. i 2 pakfp (to-281) drawing table 9. i 2 pakfp (to-281) mechanical data dim. mm min. typ. max. a4.40 - 4.60 b2.50 2.70 d2.50 2.75 d1 0.65 0.85 e0.45 0.70 f0.75 1.00 f1 1.20 g4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 rev!
STFI26NM60N revision history doc id 022495 rev 2 11/12 5 revision history table 10. document revision history date revision changes 15-nov-2011 1 first release. 04-jun-2012 2 document status promoted from preliminary data to production data. updated p tot and derating factor values in ta bl e 2 : a b s o l u t e maximum ratings , r th-case value in table 3: thermal data package name has been updated.
STFI26NM60N 12/12 doc id 022495 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of STFI26NM60N

	To Download STFI26NM60N Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .